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| MJF44H11 (NPN), MJF45H11 (PNP) Preferred Devices Complementary Power Transistors For Isolated Package Applications Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features http://onsemi.com SILICON POWER TRANSISTORS 10 AMPERES 80 VOLTS, 36 WATTS * Low Collector-Emitter Saturation Voltage - * * * VCE(sat) = 1.0 V (Max) @ 8.0 A Fast Switching Speeds Complementary Pairs Simplifies Designs Pb-Free Packages are Available* 1 Symbol VCEO VEB IC Value 80 5 10 20 Unit Vdc Vdc Adc 2 MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current ISOLATED TO-220 CASE 221D STYLE 2 3 IIIIIIIIIIIIIIIIIII I II II I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII I II I I I I I I I I IIIIIIIIIII IIIIIIIIIIIIIIIIIII I II II I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII I II II I I IIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II - Continuous - Peak Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation @ TA = 25C Derate above 25C PD 36 1.67 W W/C W W/C C PD 2.0 0.016 Operating and Storage Junction Temperature Range TJ, Tstg -55 to 150 MARKING DIAGRAM F4xH11G AYWW THERMAL CHARACTERISTICS Characteristic Symbol RqJC RqJA Max 3.5 Unit Thermal Resistance, Junction-to-Case C/W C/W Thermal Resistance, Junction-to-Ambient 62.5 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. F4xH11 = Specific Device Code x = 4 or 5 G = Pb-Free Package A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION Device MJF44H11 MJF44H11G MJF45H11 MJF45H11G Package TO-220 FULLPACK TO-220 FULLPACK (Pb-Free) TO-220 FULLPACK TO-220 FULLPACK (Pb-Free) Shipping 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 Preferred devices are recommended choices for future use and best overall value. April, 2006 - Rev. 4 1 Publication Order Number: MJF44H11/D IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III III I I I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III III II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I III I I I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII I III I I IIIIIIIIIIIIIIIIIII II III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II III I III III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIII I III III I I IIIIIIIIIIIIIIIIIIII II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII SWITCHING TIMES DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Fall Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) Storage Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) Delay and Rise Times (IC = 5 Adc, IB1 = 0.5 Adc) Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz) DC Current Gain (VCE = 1 Vdc, IC = 4 Adc) DC Current Gain (VCE = 1 Vdc, IC = 2 Adc) Base-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) Emitter Cutoff Current (VEB = 5 Vdc) Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) Collector-Emitter Sustaining Voltage (IC = 30 mA, IB = 0) 0.02 0.03 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.07 0.05 0.01 0.01 0.3 1.0 0.7 0.5 0.1 0.2 0.01 D = 0.5 0.02 0.05 0.02 0.1 0.2 SINGLE PULSE 0.05 Characteristic 0.1 0.2 MJF44H11 (NPN), MJF45H11 (PNP) Figure 1. Thermal Response 0.5 http://onsemi.com 1.0 2.0 t, TIME (ms) MJF44H11 MJF45H11 MJF44H11 MJF45H11 MJF44H11 MJF45H11 MJF44H11 MJF45H11 MJF44H11 MJF45H11 ZqJC(t) = r(t) RqJC RqJC = 1.56C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 5.0 VCEO(sus) Symbol VCE(sat) VBE(sat) 10 td + tr IEBO ICES hFE Ccb fT ts tf 20 Min 40 60 80 - - - - - - - - - - - - - - 50 P(pk) DUTY CYCLE, D = t1/t2 100 Typ 140 100 500 500 300 135 130 230 50 40 - - - - - - - t1 t2 200 Max 1.5 1.0 1.0 10 - - - - - - - - - - - - - 500 MHz Unit Vdc Vdc Vdc mA mA pF ns ns ns - 1.0 k 2 MJF44H11 (NPN), MJF45H11 (PNP) 100 IC, COLLECTOR CURRENT (AMPS) 50 30 20 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 1.0 1.0 ms 100 ms 10 ms TC 70 C DUTY CYCLE 50% dc 1.0 ms MJF44H11/MJF45H11 5.0 7.0 10 2.0 3.0 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 2. Maximum Rated Forward Bias Safe Operating Area TA PD, POWER DISSIPATION (WATTS) TC 3.0 60 2.0 40 TA 1.0 20 TC 0 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (C) Figure 3. Power Derating http://onsemi.com 3 MJF44H11 (NPN), MJF45H11 (PNP) 1000 1000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 100 VCE = 4 V VCE = 4 V 100 1V TJ = 25C TJ = 25C VCE = 1 V 10 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 10 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 4. MJF44H11 DC Current Gain Figure 5. MJF45H11 DC Current Gain 1000 1000 TJ = 125C 25C -40 C 100 VCE = 1 V hFE , DC CURRENT GAIN TJ = 125C 25C 100 -40 C VCE = 1 V 10 hFE , DC CURRENT GAIN 1 10 0.1 10 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 IC, COLLECTOR CURRENT (AMPS) Figure 6. MJF44H11 Current Gain versus Temperature Figure 7. MJF45H11 Current Gain versus Temperature 1.2 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 1 0.8 0.6 0.4 0.2 0 0.1 IC/IB = 10 TJ = 25C VCE(sat) VBE(sat) 1.2 1 0.8 0.6 0.4 0.2 0 0.1 IC/IB = 10 TJ = 25C VCE(sat) VBE(sat) 1 IC, COLLECTOR CURRENT (AMPS) 10 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 8. MJF44H11 On-Voltages Figure 9. MJF45H11 On-Voltages http://onsemi.com 4 MJF44H11 (NPN), MJF45H11 (PNP) PACKAGE DIMENSIONS TO-220 FULLPAK CASE 221D-03 ISSUE G -T- F Q A 123 SEATING PLANE -B- C S U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.625 0.635 0.408 0.418 0.180 0.190 0.026 0.031 0.116 0.119 0.100 BSC 0.125 0.135 0.018 0.025 0.530 0.540 0.048 0.053 0.200 BSC 0.124 0.128 0.099 0.103 0.101 0.113 0.238 0.258 MILLIMETERS MIN MAX 15.88 16.12 10.37 10.63 4.57 4.83 0.65 0.78 2.95 3.02 2.54 BSC 3.18 3.43 0.45 0.63 13.47 13.73 1.23 1.36 5.08 BSC 3.15 3.25 2.51 2.62 2.57 2.87 6.06 6.56 H K -Y- G N L D 3 PL M J R 0.25 (0.010) B M Y STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 MJF44H11/D |
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